IRFR3504ZTRPBF vs IRFR3607TRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR3504ZTRPBF disebabkan oleh Infineon dan IRFR3607TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFR3504ZTRPBF | IRFR3607TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, TC=25°C) | 42 A | — |
| Continuous Drain Current (ID, TC=100°C) | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulsed] | — |
| On-Resistance RDS(on) max @ VGS=10V | 9 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th) typ) | 1.8 V (logic-level) | — |
| Total Gate Charge (Qg) typ | 30 nC | — |
| Power Dissipation (PD) at TC=25°C | 90 W | — |
| Suhu Hubungan Operasi | -55°C to +175°C | — |
| Kemasan | TO-252AA (DPAK) surface mount | TO-252AA (DPAK) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | HEXFET (N-Channel Silicon MOSFET) | IR HEXFET (planar DMOS) |
| Status RoHS | Compliant | — |
| Aras MSL | 1 (unlimited) | — |
| Avalanche Rated | Yes (improved repetitive avalanche rating) | — |
| Polarity / Channel Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 75 V |
| Continuous Drain Current (ID, Tc) | — | 56 A |
| Calculated Die Drain Current | — | 80 A |
| On-State Resistance (RDS(on)) | — | 9 mOhm @ VGS=10V, ID=46A |
| Gate Threshold Voltage (VGS(th)) | — | 4 V |
| Total Gate Charge (Qg) | — | 56 nC |
| Gate-to-Source Voltage (VGS) Max | — | +/-20 V |
| Power Dissipation (PD, Tc) | — | 140 W |
| Thermal Resistance (RthJC) | — | 1.0 C/W |
| Gambaran Suhu Operasi | — | -55C to +175C (TJ max 175C per datasheet convention) |
| Avalanche SOA | — | Fully characterized |
| RoHS / Lead-Free | — | Compliant / Pb-free (PBF suffix, JESD-609 e3) |