IRFR3504ZTRPBF vs IRFR3607TRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFR3504ZTRPBF sa pamamagitan ng Infineon at IRFR3607TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRFR3504ZTRPBF IRFR3607TRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID, TC=25°C) 42 A —
Continuous Drain Current (ID, TC=100°C) [DATA_NEEDED: ID at TC=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM pulsed] —
On-Resistance RDS(on) max @ VGS=10V 9 mΩ —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th) typ) 1.8 V (logic-level) —
Total Gate Charge (Qg) typ 30 nC —
Power Dissipation (PD) at TC=25°C 90 W —
Temperature ng Junction na Operasyon -55°C to +175°C —
Packhaging TO-252AA (DPAK) surface mount TO-252AA (DPAK)
Uri ng Pagpapasok Surface Mount Surface Mount
Technology HEXFET (N-Channel Silicon MOSFET) IR HEXFET (planar DMOS)
Tindminan RoHS Compliant —
Level ng MSL 1 (unlimited) —
Avalanche Rated Yes (improved repetitive avalanche rating) —
Polarity / Channel Type — N-Channel
Drain-to-Source Voltage (VDS) — 75 V
Continuous Drain Current (ID, Tc) — 56 A
Calculated Die Drain Current — 80 A
On-State Resistance (RDS(on)) — 9 mOhm @ VGS=10V, ID=46A
Gate Threshold Voltage (VGS(th)) — 4 V
Total Gate Charge (Qg) — 56 nC
Gate-to-Source Voltage (VGS) Max — +/-20 V
Power Dissipation (PD, Tc) — 140 W
Thermal Resistance (RthJC) — 1.0 C/W
Hanay ng Temperature na Operasyon — -55C to +175C (TJ max 175C per datasheet convention)
Avalanche SOA — Fully characterized
RoHS / Lead-Free — Compliant / Pb-free (PBF suffix, JESD-609 e3)

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