IRFR4620TRLPBF vs IRFR9120NTRLPBF Perbandingan
Perbandingan bersamaan detil IRFR4620TRLPBF dari Infineon dan IRFR9120NTRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRFR4620TRLPBF | IRFR9120NTRLPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Number | IRFR4620TRLPBF | — |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 200 V | -100 V |
| Continuous Drain Current (ID) | 24 A at Tc | -6.6 A (Tc) |
| On-Resistance (RDS(on)) | 78 mOhm max at VGS=10V | 480 mOhm max @ VGS = -10 V |
| Gate Charge (Qg) | 25 nC typical | 18 nC (typ) |
| Power Dissipation (PD) | 144 W at Tc | 40 W (Tc) |
| Technology | IR MOSFET | IR MOSFET (planar) |
| Paket / Case | TO-252AA (DPAK) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | -55C to +175C | — |
| Lead Free | Yes | — |
| Status RoHS | Compliant | Compliant (Pb-free) |
| Level MSL | 1 (Unlimited) | 1 |
| Transistor Polarity | — | P-Channel |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | -2 V to -4 V |
| Rentang Suhu Kerja | — | -55C to +150C (Tj) |
| Paket | — | TO-252AA (DPAK) |
| Jumlah Pin | — | 3 (Gate, Drain, Source) |
| Lead-Free | — | Yes |