IRFR4620TRLPBF vs IRFR9120NTRLPBF 比較
詳細並排比較 IRFR4620TRLPBF 由 Infineon 與 IRFR9120NTRLPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRFR4620TRLPBF | IRFR9120NTRLPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IRFR4620TRLPBF | — |
| 電晶體類型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 200 V | -100 V |
| Continuous Drain Current (ID) | 24 A at Tc | -6.6 A (Tc) |
| On-Resistance (RDS(on)) | 78 mOhm max at VGS=10V | 480 mOhm max @ VGS = -10 V |
| Gate Charge (Qg) | 25 nC typical | 18 nC (typ) |
| Power Dissipation (PD) | 144 W at Tc | 40 W (Tc) |
| Technology | IR MOSFET | IR MOSFET (planar) |
| 封裝 / 外殼 | TO-252AA (DPAK) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | -55C to +175C | — |
| Lead Free | Yes | — |
| RoHS 狀態 | Compliant | Compliant (Pb-free) |
| MSL 等級 | 1 (Unlimited) | 1 |
| Transistor Polarity | — | P-Channel |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | -2 V to -4 V |
| 工作溫度範圍 | — | -55C to +150C (Tj) |
| 封裝 | — | TO-252AA (DPAK) |
| 腳位數 | — | 3 (Gate, Drain, Source) |
| Lead-Free | — | Yes |