IRFR4620TRLPBF vs IRFR9120NTRLPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR4620TRLPBF disebabkan oleh Infineon dan IRFR9120NTRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFR4620TRLPBF | IRFR9120NTRLPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Number | IRFR4620TRLPBF | — |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 200 V | -100 V |
| Continuous Drain Current (ID) | 24 A at Tc | -6.6 A (Tc) |
| On-Resistance (RDS(on)) | 78 mOhm max at VGS=10V | 480 mOhm max @ VGS = -10 V |
| Gate Charge (Qg) | 25 nC typical | 18 nC (typ) |
| Power Dissipation (PD) | 144 W at Tc | 40 W (Tc) |
| Technology | IR MOSFET | IR MOSFET (planar) |
| Kemasan / Case | TO-252AA (DPAK) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | -55C to +175C | — |
| Lead Free | Yes | — |
| Status RoHS | Compliant | Compliant (Pb-free) |
| Aras MSL | 1 (Unlimited) | 1 |
| Transistor Polarity | — | P-Channel |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | -2 V to -4 V |
| Gambaran Suhu Operasi | — | -55C to +150C (Tj) |
| Kemasan | — | TO-252AA (DPAK) |
| Kiraan Pin | — | 3 (Gate, Drain, Source) |
| Lead-Free | — | Yes |