IRFR9024NTRLPBF vs IRF7205PBF Perbandingan
Perbandingan bersamaan detil IRFR9024NTRLPBF dari Infineon dan IRF7205PBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRFR9024NTRLPBF | IRF7205PBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | P-Channel | P-Channel |
| MOSFET Operating Mode | Enhancement | — |
| Drain-Source Voltage (VDS) | -55 V | -30 V |
| Continuous Drain Current (ID) at TC=25C | -11 A | — |
| On-Resistance RDS(on) max at VGS=-10V | 175 mOhm | 70 mOhm |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| Power Dissipation (PD) at TC=25C | 38 W | — |
| Gate Charge (Qg) typical | 12.7 nC | — |
| Package Type | TO-252AA (DPAK) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | 3 (Drain, Gate, Source + Tab) | — |
| Technology | HEXFET (Generation 5) | IR MOSFET (HEXFET, planar cell) |
| Rentang Suhu Kerja | -55C to +175C | -55 C to +150 C (junction) |
| Lead-Free / RoHS | Yes (LPBF suffix) | — |
| Reel Orientation | Left (TRL suffix) | — |
| Continuous Drain Current (ID) | — | -4.6 A |
| On-Resistance RDS(on) max at VGS=-4.5V | — | [DATA_NEEDED: RDS(on) at VGS=-4.5V] |
| Gate Threshold Voltage VGS(th) | — | -1 V to -3 V (typical) |
| Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Paket | — | SO-8 |
| Power Dissipation (TA=25C) | — | [DATA_NEEDED: Pd at TA=25C] |
| Switching Frequency Optimization | — | Below 100 kHz |
| Qualification | — | JEDEC standard |
| Status RoHS | — | Compliant (Pb-free per PBF suffix) |
| Generation | — | Fourth Generation HEXFET |