IRFR9024NTRLPBF vs IRF7205PBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFR9024NTRLPBF sa pamamagitan ng Infineon at IRF7205PBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IRFR9024NTRLPBF IRFR9024NTRLPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR9024NTRLPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRFR9024NTRLPBF ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IRFR9024NTRLPBF IRF7205PBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Polarity P-Channel P-Channel
MOSFET Operating Mode Enhancement —
Drain-Source Voltage (VDS) -55 V -30 V
Continuous Drain Current (ID) at TC=25C -11 A —
On-Resistance RDS(on) max at VGS=-10V 175 mOhm 70 mOhm
Gate-Source Voltage (VGS) max +/-20 V —
Power Dissipation (PD) at TC=25C 38 W —
Gate Charge (Qg) typical 12.7 nC —
Package Type TO-252AA (DPAK) —
Uri ng Pagpapasok Surface Mount Surface Mount
Bilang ng Pin 3 (Drain, Gate, Source + Tab) —
Technology HEXFET (Generation 5) IR MOSFET (HEXFET, planar cell)
Hanay ng Temperature na Operasyon -55C to +175C -55 C to +150 C (junction)
Lead-Free / RoHS Yes (LPBF suffix) —
Reel Orientation Left (TRL suffix) —
Continuous Drain Current (ID) — -4.6 A
On-Resistance RDS(on) max at VGS=-4.5V — [DATA_NEEDED: RDS(on) at VGS=-4.5V]
Gate Threshold Voltage VGS(th) — -1 V to -3 V (typical)
Gate Charge Qg — [DATA_NEEDED: total gate charge]
Packhaging — SO-8
Power Dissipation (TA=25C) — [DATA_NEEDED: Pd at TA=25C]
Switching Frequency Optimization — Below 100 kHz
Qualification — JEDEC standard
Tindminan RoHS — Compliant (Pb-free per PBF suffix)
Generation — Fourth Generation HEXFET

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