IRFR9024NTRLPBF vs IRF7205PBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR9024NTRLPBF disebabkan oleh Infineon dan IRF7205PBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFR9024NTRLPBF | IRF7205PBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | P-Channel | P-Channel |
| MOSFET Operating Mode | Enhancement | — |
| Drain-Source Voltage (VDS) | -55 V | -30 V |
| Continuous Drain Current (ID) at TC=25C | -11 A | — |
| On-Resistance RDS(on) max at VGS=-10V | 175 mOhm | 70 mOhm |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| Power Dissipation (PD) at TC=25C | 38 W | — |
| Gate Charge (Qg) typical | 12.7 nC | — |
| Package Type | TO-252AA (DPAK) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kiraan Pin | 3 (Drain, Gate, Source + Tab) | — |
| Technology | HEXFET (Generation 5) | IR MOSFET (HEXFET, planar cell) |
| Gambaran Suhu Operasi | -55C to +175C | -55 C to +150 C (junction) |
| Lead-Free / RoHS | Yes (LPBF suffix) | — |
| Reel Orientation | Left (TRL suffix) | — |
| Continuous Drain Current (ID) | — | -4.6 A |
| On-Resistance RDS(on) max at VGS=-4.5V | — | [DATA_NEEDED: RDS(on) at VGS=-4.5V] |
| Gate Threshold Voltage VGS(th) | — | -1 V to -3 V (typical) |
| Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Kemasan | — | SO-8 |
| Power Dissipation (TA=25C) | — | [DATA_NEEDED: Pd at TA=25C] |
| Switching Frequency Optimization | — | Below 100 kHz |
| Qualification | — | JEDEC standard |
| Status RoHS | — | Compliant (Pb-free per PBF suffix) |
| Generation | — | Fourth Generation HEXFET |