IRFS52N15DPBF vs IRFB52N15DPBF Perbandingan

Perbandingan bersamaan detil IRFS52N15DPBF dari Infineon dan IRFB52N15DPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFS52N15DPBF IRFB52N15DPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology HEXFET (Planar Cell) HEXFET (vertical DMOS, hexagonal cell)
Drain-Source Voltage (VDS) 150 V —
Continuous Drain Current (ID) @ TC=25C 51 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] 204 A
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max] —
RDS(on) max @ VGS=10V 32 mOhm —
Total Gate Charge (Qg) 60 nC (typical) 60 nC (typical)
Gate-Source Charge (Qgs) [DATA_NEEDED: Qgs] —
Gate-Drain Charge (Qgd) [DATA_NEEDED: Qgd] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Output Capacitance (Coss) [DATA_NEEDED: Coss] —
Reverse Transfer Capacitance (Crss) [DATA_NEEDED: Crss] —
Power Dissipation (PD) @ TA=25C 3.8 W —
Power Dissipation (PD) @ TC=25C 230 W —
Suhu Hubung Kerja -55C to +175C -55 C to +175 C
Paket D2PAK (TO-263) Surface Mount —
Tipe Mounting Surface Mount Through Hole
Qualification Standard JEDEC Industrial market (per IR/Infineon)
Level MSL 1 (per JEDEC J-STD-020) —
Lead-Free Yes —
Status RoHS Compliant Compliant
Drain-Source Voltage (V(BR)DSS) — 150 V
Continuous Drain Current (ID) at TC=25C — 51 A
Gate Threshold Voltage (VGS(th)) — 2.0 V to 4.0 V
Static Drain-Source On-Resistance (RDS(on)) — 32 mOhm at VGS=10V
Power Dissipation (PD) at TC=25C — 230 W
Power Dissipation (PD) at TA=25C — 3.8 W
Package Type — TO-220AB (through-hole)
Polarity / Channel Type — N-Channel Enhancement Mode
Lead-Free Finish — Yes (Pb-free PBF suffix)

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon