IRFS52N15DPBF vs IRFB52N15DPBF Karşılaştırma

Ayrıntılı yan yana karşılaştırma IRFS52N15DPBF tarafından Infineon ve IRFB52N15DPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Özellik Karşılaştırması

Parametre IRFS52N15DPBF IRFB52N15DPBF
Marka Infineon Infineon
Kategori MOSFETs MOSFETs
Yaşam Döngüsü Durumu Aktif Aktif
FET Type N-Channel —
Technology HEXFET (Planar Cell) HEXFET (vertical DMOS, hexagonal cell)
Drain-Source Voltage (VDS) 150 V —
Continuous Drain Current (ID) @ TC=25C 51 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] 204 A
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max] —
RDS(on) max @ VGS=10V 32 mOhm —
Total Gate Charge (Qg) 60 nC (typical) 60 nC (typical)
Gate-Source Charge (Qgs) [DATA_NEEDED: Qgs] —
Gate-Drain Charge (Qgd) [DATA_NEEDED: Qgd] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Output Capacitance (Coss) [DATA_NEEDED: Coss] —
Reverse Transfer Capacitance (Crss) [DATA_NEEDED: Crss] —
Power Dissipation (PD) @ TA=25C 3.8 W —
Power Dissipation (PD) @ TC=25C 230 W —
İşletim Jant Sıcaklığı -55C to +175C -55 C to +175 C
Paket D2PAK (TO-263) Surface Mount —
Montaj Türü Surface Mount Through Hole
Qualification Standard JEDEC Industrial market (per IR/Infineon)
MSL Seviyesi 1 (per JEDEC J-STD-020) —
Lead-Free Yes —
RoHS Durumu Compliant Compliant
Drain-Source Voltage (V(BR)DSS) — 150 V
Continuous Drain Current (ID) at TC=25C — 51 A
Gate Threshold Voltage (VGS(th)) — 2.0 V to 4.0 V
Static Drain-Source On-Resistance (RDS(on)) — 32 mOhm at VGS=10V
Power Dissipation (PD) at TC=25C — 230 W
Power Dissipation (PD) at TA=25C — 3.8 W
Package Type — TO-220AB (through-hole)
Polarity / Channel Type — N-Channel Enhancement Mode
Lead-Free Finish — Yes (Pb-free PBF suffix)

Dökümanlar & Kaynaklar

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