IRL40S212ARMA1 vs IPD034N06N3GATMA1 Perbandingan
Perbandingan bersamaan detil IRL40S212ARMA1 dari Infineon dan IPD034N06N3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRL40S212ARMA1 | IPD034N06N3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | StrongIRFET™ | — |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | 60 V |
| Continuous Drain Current (ID, Tc) | 195 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance (RDS(on)) | 1.9 mOhm max | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | [DATA_NEEDED: max VGS rating] |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ] | — |
| Power Dissipation (PD, Tc) | 231 W | — |
| Rentang Suhu Kerja | [DATA_NEEDED: Tj max] | [DATA_NEEDED: Tj min/max] |
| Paket | PG-TO263-3 (D2PAK) | PG-TO252-3 (DPAK) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | StrongIRFET™ (planar N-channel) | N-Channel Trench MOSFET (OptiMOS 3) |
| Status RoHS | Compliant | Compliant (Pb-free green finish) |
| Lead-Free | Yes | — |
| Level MSL | 1 (unlimited) | [DATA_NEEDED: MSL rating] |
| Series | — | OptiMOS 3 |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Maximum Power Dissipation (Ptot) | — | 167 W |
| On-Resistance RDS(on) max at VGS=10V | — | 3.4 mOhm |
| Gate Threshold Voltage VGS(th) | — | 4 V at 93 uA |
| Pin Configuration | — | 3-Pin (2 + Tab) |
| Automotive Qualified | — | Yes (per Infineon product page) |