IRL40S212ARMA1 vs IPD034N06N3GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRL40S212ARMA1 disebabkan oleh Infineon dan IPD034N06N3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IPD034N06N3GATMA1 IPD034N06N3GATMA1 - 60V 100A OptiMOS 3 N-MOSFET | Infineon

IPD034N06N3GATMA1 - 60V 100A OptiMOS 3 N-MOSFET | Infineon

IPD034N06N3GATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IRL40S212ARMA1 IPD034N06N3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Family StrongIRFET™ —
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 40 V 60 V
Continuous Drain Current (ID, Tc) 195 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance (RDS(on)) 1.9 mOhm max —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] [DATA_NEEDED: max VGS rating]
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ] —
Power Dissipation (PD, Tc) 231 W —
Gambaran Suhu Operasi [DATA_NEEDED: Tj max] [DATA_NEEDED: Tj min/max]
Kemasan PG-TO263-3 (D2PAK) PG-TO252-3 (DPAK)
Jenis Pemasangan Surface Mount Surface Mount
Technology StrongIRFET™ (planar N-channel) N-Channel Trench MOSFET (OptiMOS 3)
Status RoHS Compliant Compliant (Pb-free green finish)
Lead-Free Yes —
Aras MSL 1 (unlimited) [DATA_NEEDED: MSL rating]
Series — OptiMOS 3
Continuous Drain Current (ID) at Tc — 100 A
Maximum Power Dissipation (Ptot) — 167 W
On-Resistance RDS(on) max at VGS=10V — 3.4 mOhm
Gate Threshold Voltage VGS(th) — 4 V at 93 uA
Pin Configuration — 3-Pin (2 + Tab)
Automotive Qualified — Yes (per Infineon product page)

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