IRL40S212ARMA1 vs IPD034N06N3GATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRL40S212ARMA1 sa pamamagitan ng Infineon at IPD034N06N3GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRL40S212ARMA1 | IPD034N06N3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | StrongIRFET™ | — |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | 60 V |
| Continuous Drain Current (ID, Tc) | 195 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance (RDS(on)) | 1.9 mOhm max | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | [DATA_NEEDED: max VGS rating] |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ] | — |
| Power Dissipation (PD, Tc) | 231 W | — |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: Tj max] | [DATA_NEEDED: Tj min/max] |
| Packhaging | PG-TO263-3 (D2PAK) | PG-TO252-3 (DPAK) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | StrongIRFET™ (planar N-channel) | N-Channel Trench MOSFET (OptiMOS 3) |
| Tindminan RoHS | Compliant | Compliant (Pb-free green finish) |
| Lead-Free | Yes | — |
| Level ng MSL | 1 (unlimited) | [DATA_NEEDED: MSL rating] |
| Series | — | OptiMOS 3 |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Maximum Power Dissipation (Ptot) | — | 167 W |
| On-Resistance RDS(on) max at VGS=10V | — | 3.4 mOhm |
| Gate Threshold Voltage VGS(th) | — | 4 V at 93 uA |
| Pin Configuration | — | 3-Pin (2 + Tab) |
| Automotive Qualified | — | Yes (per Infineon product page) |