IRL40S212ARMA1 vs IPD320N20N3GATMA1 Perbandingan
Perbandingan bersamaan detil IRL40S212ARMA1 dari Infineon dan IPD320N20N3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPD320N20N3GATMA1 - 200V 34A OptiMOS3 N-Channel MOSFET | Infineon
IPD320N20N3GATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IRL40S212ARMA1 | IPD320N20N3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Family | StrongIRFET™ | — |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | 200 V |
| Continuous Drain Current (ID, Tc) | 195 A | 34 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance (RDS(on)) | 1.9 mOhm max | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ] | — |
| Power Dissipation (PD, Tc) | 231 W | 136 W |
| Rentang Suhu Kerja | [DATA_NEEDED: Tj max] | -55 C to +175 C (Tj) |
| Paket | PG-TO263-3 (D2PAK) | PG-TO252-3 (DPAK) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | StrongIRFET™ (planar N-channel) | OptiMOS 3 |
| Status RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Level MSL | 1 (unlimited) | — |
| FET Type | — | N-Channel |
| On-Resistance RDS(on) max | — | 32 mOhm at VGS = 10 V |
| Gate Charge x RDS(on) FOM | — | Excellent (per datasheet) |
| Lead Plating | — | Pb-free |
| RoHS Compliance | — | Compliant |
| JEDEC Qualification | — | Qualified for target application |
| Channel Mode | — | Enhancement mode |
| Gate Threshold Level | — | Normal level (per datasheet title) |