IRL40S212ARMA1 vs IPD320N20N3GATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRL40S212ARMA1 sa pamamagitan ng Infineon at IPD320N20N3GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPD320N20N3GATMA1 - 200V 34A OptiMOS3 N-Channel MOSFET | Infineon
IPD320N20N3GATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IRL40S212ARMA1 | IPD320N20N3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Part Family | StrongIRFET™ | — |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | 200 V |
| Continuous Drain Current (ID, Tc) | 195 A | 34 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance (RDS(on)) | 1.9 mOhm max | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ] | — |
| Power Dissipation (PD, Tc) | 231 W | 136 W |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: Tj max] | -55 C to +175 C (Tj) |
| Packhaging | PG-TO263-3 (D2PAK) | PG-TO252-3 (DPAK) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | StrongIRFET™ (planar N-channel) | OptiMOS 3 |
| Tindminan RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Level ng MSL | 1 (unlimited) | — |
| FET Type | — | N-Channel |
| On-Resistance RDS(on) max | — | 32 mOhm at VGS = 10 V |
| Gate Charge x RDS(on) FOM | — | Excellent (per datasheet) |
| Lead Plating | — | Pb-free |
| RoHS Compliance | — | Compliant |
| JEDEC Qualification | — | Qualified for target application |
| Channel Mode | — | Enhancement mode |
| Gate Threshold Level | — | Normal level (per datasheet title) |