IRL40S212ARMA1 vs IPD320N20N3GATMA1 比較
詳細並排比較 IRL40S212ARMA1 由 Infineon 與 IPD320N20N3GATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRL40S212ARMA1 | IPD320N20N3GATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Part Family | StrongIRFET™ | — |
| 電晶體類型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | 200 V |
| Continuous Drain Current (ID, Tc) | 195 A | 34 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance (RDS(on)) | 1.9 mOhm max | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ] | — |
| Power Dissipation (PD, Tc) | 231 W | 136 W |
| 工作溫度範圍 | [DATA_NEEDED: Tj max] | -55 C to +175 C (Tj) |
| 封裝 | PG-TO263-3 (D2PAK) | PG-TO252-3 (DPAK) |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | StrongIRFET™ (planar N-channel) | OptiMOS 3 |
| RoHS 狀態 | Compliant | — |
| Lead-Free | Yes | — |
| MSL 等級 | 1 (unlimited) | — |
| FET Type | — | N-Channel |
| On-Resistance RDS(on) max | — | 32 mOhm at VGS = 10 V |
| Gate Charge x RDS(on) FOM | — | Excellent (per datasheet) |
| Lead Plating | — | Pb-free |
| RoHS Compliance | — | Compliant |
| JEDEC Qualification | — | Qualified for target application |
| Channel Mode | — | Enhancement mode |
| Gate Threshold Level | — | Normal level (per datasheet title) |