IRL40S212ARMA1 vs IPD320N20N3GATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRL40S212ARMA1 disebabkan oleh Infineon dan IPD320N20N3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IPD320N20N3GATMA1 - 200V 34A OptiMOS3 N-Channel MOSFET | Infineon
IPD320N20N3GATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IRL40S212ARMA1 | IPD320N20N3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Family | StrongIRFET™ | — |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | 200 V |
| Continuous Drain Current (ID, Tc) | 195 A | 34 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance (RDS(on)) | 1.9 mOhm max | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ] | — |
| Power Dissipation (PD, Tc) | 231 W | 136 W |
| Gambaran Suhu Operasi | [DATA_NEEDED: Tj max] | -55 C to +175 C (Tj) |
| Kemasan | PG-TO263-3 (D2PAK) | PG-TO252-3 (DPAK) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | StrongIRFET™ (planar N-channel) | OptiMOS 3 |
| Status RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Aras MSL | 1 (unlimited) | — |
| FET Type | — | N-Channel |
| On-Resistance RDS(on) max | — | 32 mOhm at VGS = 10 V |
| Gate Charge x RDS(on) FOM | — | Excellent (per datasheet) |
| Lead Plating | — | Pb-free |
| RoHS Compliance | — | Compliant |
| JEDEC Qualification | — | Qualified for target application |
| Channel Mode | — | Enhancement mode |
| Gate Threshold Level | — | Normal level (per datasheet title) |