IRL540NSTRLPBF vs IRFR120NTRLPBF Perbandingan

Perbandingan bersamaan detil IRL540NSTRLPBF dari Infineon dan IRFR120NTRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRL540NSTRLPBF IRFR120NTRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at Tc=25°C 36 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
On-Resistance (RDS(on)) max @ VGS=10V 44 mΩ —
On-Resistance (RDS(on)) max @ VGS=5V [DATA_NEEDED: RDS(on) at VGS=5V] —
Gate-Source Voltage (VGS) max ±16 V [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) Logic-level [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) 49.3 nC 16.7 nC
Power Dissipation (PD) at Tc=25°C 140 W —
Power Dissipation (PD) at TA=25°C 3.8 W —
Rentang Suhu Kerja -55°C to +175°C —
Paket TO-263 (D2PAK) PG-TO252-3 (DPAK)
Tipe Mounting Surface Mount Surface Mount
Avalanche Energy Rated Yes (single-pulse) Yes (fully avalanche rated)
Status RoHS Compliant (LPBF suffix indicates lead-free) Compliant
Level MSL [DATA_NEEDED: MSL rating] —
Technology — IR MOSFET (HEXFET)
Continuous Drain Current (ID) at TC=25C — 9.4 A
On-Resistance RDS(on) max at VGS=10V — 210 mΩ
Power Dissipation (PD) at TC=25C — 48 W
Rentang Suhu Hubung Kerja — -55C to +175C
Lead-Free Finish — Yes (Pb-free)

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