IRL540NSTRLPBF vs IRFR120NTRLPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRL540NSTRLPBF sa pamamagitan ng Infineon at IRFR120NTRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRL540NSTRLPBF | IRFR120NTRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at Tc=25°C | 36 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (RDS(on)) max @ VGS=10V | 44 mΩ | — |
| On-Resistance (RDS(on)) max @ VGS=5V | [DATA_NEEDED: RDS(on) at VGS=5V] | — |
| Gate-Source Voltage (VGS) max | ±16 V | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | Logic-level | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | 49.3 nC | 16.7 nC |
| Power Dissipation (PD) at Tc=25°C | 140 W | — |
| Power Dissipation (PD) at TA=25°C | 3.8 W | — |
| Hanay ng Temperature na Operasyon | -55°C to +175°C | — |
| Packhaging | TO-263 (D2PAK) | PG-TO252-3 (DPAK) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Avalanche Energy Rated | Yes (single-pulse) | Yes (fully avalanche rated) |
| Tindminan RoHS | Compliant (LPBF suffix indicates lead-free) | Compliant |
| Level ng MSL | [DATA_NEEDED: MSL rating] | — |
| Technology | — | IR MOSFET (HEXFET) |
| Continuous Drain Current (ID) at TC=25C | — | 9.4 A |
| On-Resistance RDS(on) max at VGS=10V | — | 210 mΩ |
| Power Dissipation (PD) at TC=25C | — | 48 W |
| Hanay ng Temperature ng Junction na Operasyon | — | -55C to +175C |
| Lead-Free Finish | — | Yes (Pb-free) |