IRL540NSTRLPBF vs IRFR120NTRLPBF 比較

詳細並排比較 IRL540NSTRLPBF 由 Infineon 與 IRFR120NTRLPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IRL540NSTRLPBF IRFR120NTRLPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at Tc=25°C 36 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
On-Resistance (RDS(on)) max @ VGS=10V 44 mΩ —
On-Resistance (RDS(on)) max @ VGS=5V [DATA_NEEDED: RDS(on) at VGS=5V] —
Gate-Source Voltage (VGS) max ±16 V [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) Logic-level [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) 49.3 nC 16.7 nC
Power Dissipation (PD) at Tc=25°C 140 W —
Power Dissipation (PD) at TA=25°C 3.8 W —
工作溫度範圍 -55°C to +175°C —
封裝 TO-263 (D2PAK) PG-TO252-3 (DPAK)
安裝類型 Surface Mount Surface Mount
Avalanche Energy Rated Yes (single-pulse) Yes (fully avalanche rated)
RoHS 狀態 Compliant (LPBF suffix indicates lead-free) Compliant
MSL 等級 [DATA_NEEDED: MSL rating] —
Technology — IR MOSFET (HEXFET)
Continuous Drain Current (ID) at TC=25C — 9.4 A
On-Resistance RDS(on) max at VGS=10V — 210 mΩ
Power Dissipation (PD) at TC=25C — 48 W
工作接面溫度範圍 — -55C to +175C
Lead-Free Finish — Yes (Pb-free)

資料表與資源

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