IRL540NSTRLPBF vs IRFR120NTRLPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRL540NSTRLPBF disebabkan oleh Infineon dan IRFR120NTRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRL540NSTRLPBF IRFR120NTRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at Tc=25°C 36 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
On-Resistance (RDS(on)) max @ VGS=10V 44 mΩ —
On-Resistance (RDS(on)) max @ VGS=5V [DATA_NEEDED: RDS(on) at VGS=5V] —
Gate-Source Voltage (VGS) max ±16 V [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) Logic-level [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) 49.3 nC 16.7 nC
Power Dissipation (PD) at Tc=25°C 140 W —
Power Dissipation (PD) at TA=25°C 3.8 W —
Gambaran Suhu Operasi -55°C to +175°C —
Kemasan TO-263 (D2PAK) PG-TO252-3 (DPAK)
Jenis Pemasangan Surface Mount Surface Mount
Avalanche Energy Rated Yes (single-pulse) Yes (fully avalanche rated)
Status RoHS Compliant (LPBF suffix indicates lead-free) Compliant
Aras MSL [DATA_NEEDED: MSL rating] —
Technology — IR MOSFET (HEXFET)
Continuous Drain Current (ID) at TC=25C — 9.4 A
On-Resistance RDS(on) max at VGS=10V — 210 mΩ
Power Dissipation (PD) at TC=25C — 48 W
Gambaran Suhu Hubungan Operasi — -55C to +175C
Lead-Free Finish — Yes (Pb-free)

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