IRLH5030TRPBF vs IRF7416TRPBF Perbandingan
Perbandingan bersamaan detil IRLH5030TRPBF dari Infineon dan IRF7416TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRLH5030TRPBF | IRF7416TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRLH5030TRPBF | — |
| FET Type | N-Channel | P-Channel |
| Technology | IR MOSFET (HEXFET) | HEXFET (IR MOSFET) |
| Drain-to-Source Voltage (VDS) | 100 V | -30 V |
| Continuous Drain Current (ID) at TA=25C | 13 A | -10 A |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| On-Resistance RDS(on) max at VGS=10V | 9 mOhm | — |
| Total Gate Charge (Qg) | 44 nC | 61 nC |
| Gate Drive Voltage (optimized) | 10 V (capable of 4.5 V) | — |
| Power Dissipation at TA=25C | 3.6 W | — |
| Power Dissipation at TC=25C | 156 W | — |
| Thermal Resistance to PCB (RthJC) | 0.8 C/W | — |
| Paket | PQFN-8 (SuperSO8 5x6 mm) | 8-SO (SOIC-8) |
| Profile Height | ≤ 0.9 mm | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Qualification | JEDEC standard | — |
| Rg Tested | 100% | — |
| RoHS Compliance | Compliant (Lead-free, Bromide-free, Halogen-free) | — |
| Industry-Standard Pinout | Yes | — |
| Pulsed Drain Current (IDM) | — | -50 A |
| Static Drain-to-Source On-Resistance (RDS(on)) max | — | 20 mOhm at VGS = -10 V |
| Gate-to-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | -1 V to -3 V |
| Power Dissipation (PD) max at TA=25C | — | 2.5 W |
| Thermal Resistance, Junction-to-Ambient (RthJA) | — | 50 C/W |
| Rentang Suhu Hubung Kerja | — | -55 C to +150 C |
| Status RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Level MSL | — | 1 (unlimited) |