IRLH5030TRPBF vs IRF7416TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLH5030TRPBF disebabkan oleh Infineon dan IRF7416TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRLH5030TRPBF IRF7416TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRLH5030TRPBF —
FET Type N-Channel P-Channel
Technology IR MOSFET (HEXFET) HEXFET (IR MOSFET)
Drain-to-Source Voltage (VDS) 100 V -30 V
Continuous Drain Current (ID) at TA=25C 13 A -10 A
Continuous Drain Current (ID) at TC=25C 100 A —
On-Resistance RDS(on) max at VGS=10V 9 mOhm —
Total Gate Charge (Qg) 44 nC 61 nC
Gate Drive Voltage (optimized) 10 V (capable of 4.5 V) —
Power Dissipation at TA=25C 3.6 W —
Power Dissipation at TC=25C 156 W —
Thermal Resistance to PCB (RthJC) 0.8 C/W —
Kemasan PQFN-8 (SuperSO8 5x6 mm) 8-SO (SOIC-8)
Profile Height ≤ 0.9 mm —
Jenis Pemasangan Surface Mount Surface Mount
Qualification JEDEC standard —
Rg Tested 100% —
RoHS Compliance Compliant (Lead-free, Bromide-free, Halogen-free) —
Industry-Standard Pinout Yes —
Pulsed Drain Current (IDM) — -50 A
Static Drain-to-Source On-Resistance (RDS(on)) max — 20 mOhm at VGS = -10 V
Gate-to-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — -1 V to -3 V
Power Dissipation (PD) max at TA=25C — 2.5 W
Thermal Resistance, Junction-to-Ambient (RthJA) — 50 C/W
Gambaran Suhu Hubungan Operasi — -55 C to +150 C
Status RoHS — Compliant
Lead-Free — Yes
Aras MSL — 1 (unlimited)

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