IRLH5030TRPBF vs IRF7416TRPBF 比較

詳細並排比較 IRLH5030TRPBF 由 Infineon 與 IRF7416TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRF7416TRPBF IRF7416TRPBF - P-Ch 30V 10A HEXFET MOSFET | Infineon

IRF7416TRPBF - P-Ch 30V 10A HEXFET MOSFET | Infineon

IRF7416TRPBF ✓ 啟用中

規格比較

參數 IRLH5030TRPBF IRF7416TRPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRLH5030TRPBF —
FET Type N-Channel P-Channel
Technology IR MOSFET (HEXFET) HEXFET (IR MOSFET)
Drain-to-Source Voltage (VDS) 100 V -30 V
Continuous Drain Current (ID) at TA=25C 13 A -10 A
Continuous Drain Current (ID) at TC=25C 100 A —
On-Resistance RDS(on) max at VGS=10V 9 mOhm —
Total Gate Charge (Qg) 44 nC 61 nC
Gate Drive Voltage (optimized) 10 V (capable of 4.5 V) —
Power Dissipation at TA=25C 3.6 W —
Power Dissipation at TC=25C 156 W —
Thermal Resistance to PCB (RthJC) 0.8 C/W —
封裝 PQFN-8 (SuperSO8 5x6 mm) 8-SO (SOIC-8)
Profile Height ≤ 0.9 mm —
安裝類型 Surface Mount Surface Mount
Qualification JEDEC standard —
Rg Tested 100% —
RoHS Compliance Compliant (Lead-free, Bromide-free, Halogen-free) —
Industry-Standard Pinout Yes —
Pulsed Drain Current (IDM) — -50 A
Static Drain-to-Source On-Resistance (RDS(on)) max — 20 mOhm at VGS = -10 V
Gate-to-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — -1 V to -3 V
Power Dissipation (PD) max at TA=25C — 2.5 W
Thermal Resistance, Junction-to-Ambient (RthJA) — 50 C/W
工作接面溫度範圍 — -55 C to +150 C
RoHS 狀態 — Compliant
Lead-Free — Yes
MSL 等級 — 1 (unlimited)

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