IRLL2705TRPBF vs BSL215CH6327XTSA1 Perbandingan
Perbandingan bersamaan detil IRLL2705TRPBF dari Infineon dan BSL215CH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
BSL215CH6327XTSA1 - 20V 1.5A N+P Complementary OptiMOS | Infineon
BSL215CH6327XTSA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IRLL2705TRPBF | BSL215CH6327XTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel MOSFET, Metal Oxide | N-Channel and P-Channel Complementary Pair |
| Technology | HEXFET (IR MOSFET fifth generation) | OptiMOS trench MOSFET |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at 25 deg C | 3.8 A | — |
| Peak Drain Current (IDM, pulsed) | 5.2 A | — |
| RDS(on) max at VGS=10V | 40 mOhm | — |
| Total Gate Charge (Qg) | 32 nC | — |
| Gate Drive Level | Logic-Level | — |
| Power Dissipation at TA=25 deg C | 1 W (Ta), 2.1 W (per LCSC listing) | — |
| Rentang Suhu Kerja | -55 deg C to +175 deg C | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Paket | SOT-223 | — |
| Dynamic dv/dt Rating | Yes | — |
| Lead-Free | Yes (PBF suffix) | Yes |
| Status RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS |
| Drain-Source Voltage (V_DS) | — | 20 V |
| Continuous Drain Current (I_D) | — | 1.5 A |
| R_DS(on) Max @ V_GS=4.5V | — | 250 mOhm |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Power Dissipation (P_D) | — | 500 mW |
| Paket / Case | — | PG-TSOP6-6 (6-pin TSOP) |
| Suhu Kerja | — | -55C to +150C |
| Configuration | — | Half-bridge (1 N + 1 P) |
| Level MSL | — | 1 (unlimited) |