IRLL2705TRPBF vs BSL215CH6327XTSA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLL2705TRPBF disebabkan oleh Infineon dan BSL215CH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
BSL215CH6327XTSA1 - 20V 1.5A N+P Complementary OptiMOS | Infineon
BSL215CH6327XTSA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IRLL2705TRPBF | BSL215CH6327XTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel MOSFET, Metal Oxide | N-Channel and P-Channel Complementary Pair |
| Technology | HEXFET (IR MOSFET fifth generation) | OptiMOS trench MOSFET |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at 25 deg C | 3.8 A | — |
| Peak Drain Current (IDM, pulsed) | 5.2 A | — |
| RDS(on) max at VGS=10V | 40 mOhm | — |
| Total Gate Charge (Qg) | 32 nC | — |
| Gate Drive Level | Logic-Level | — |
| Power Dissipation at TA=25 deg C | 1 W (Ta), 2.1 W (per LCSC listing) | — |
| Gambaran Suhu Operasi | -55 deg C to +175 deg C | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Kemasan | SOT-223 | — |
| Dynamic dv/dt Rating | Yes | — |
| Lead-Free | Yes (PBF suffix) | Yes |
| Status RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS |
| Drain-Source Voltage (V_DS) | — | 20 V |
| Continuous Drain Current (I_D) | — | 1.5 A |
| R_DS(on) Max @ V_GS=4.5V | — | 250 mOhm |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Power Dissipation (P_D) | — | 500 mW |
| Kemasan / Case | — | PG-TSOP6-6 (6-pin TSOP) |
| Suhu Operasi | — | -55C to +150C |
| Configuration | — | Half-bridge (1 N + 1 P) |
| Aras MSL | — | 1 (unlimited) |