IRLL2705TRPBF vs BSL215CH6327XTSA1 比較
詳細並排比較 IRLL2705TRPBF 由 Infineon 與 BSL215CH6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRLL2705TRPBF | BSL215CH6327XTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel MOSFET, Metal Oxide | N-Channel and P-Channel Complementary Pair |
| Technology | HEXFET (IR MOSFET fifth generation) | OptiMOS trench MOSFET |
| Drain-to-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at 25 deg C | 3.8 A | — |
| Peak Drain Current (IDM, pulsed) | 5.2 A | — |
| RDS(on) max at VGS=10V | 40 mOhm | — |
| Total Gate Charge (Qg) | 32 nC | — |
| Gate Drive Level | Logic-Level | — |
| Power Dissipation at TA=25 deg C | 1 W (Ta), 2.1 W (per LCSC listing) | — |
| 工作溫度範圍 | -55 deg C to +175 deg C | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 封裝 | SOT-223 | — |
| Dynamic dv/dt Rating | Yes | — |
| Lead-Free | Yes (PBF suffix) | Yes |
| RoHS 狀態 | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS |
| Drain-Source Voltage (V_DS) | — | 20 V |
| Continuous Drain Current (I_D) | — | 1.5 A |
| R_DS(on) Max @ V_GS=4.5V | — | 250 mOhm |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Power Dissipation (P_D) | — | 500 mW |
| 封裝 / 外殼 | — | PG-TSOP6-6 (6-pin TSOP) |
| 工作溫度 | — | -55C to +150C |
| Configuration | — | Half-bridge (1 N + 1 P) |
| MSL 等級 | — | 1 (unlimited) |