IRLML2803TRPBF vs IRLML6246TRPBF Perbandingan

Perbandingan bersamaan detil IRLML2803TRPBF dari Infineon dan IRLML6246TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRLML2803TRPBF IRLML6246TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies (formerly International Rectifier)
Part Number IRLML2803TRPBF IRLML6246TRPBF
Tipe Transistor N-Channel MOSFET —
Technology IR MOSFET Generation V IR MOSFET (HEXFET Power MOSFET)
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at TA=25C 1.2 A —
On-Resistance RDS(on) at VGS=4.5V 250 mOhm maximum —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th)] —
Gate Charge (Qg) 3.3 nC typical —
Power Dissipation (PD) at TA=25C 540 mW —
Paket Micro3 / SOT-23 (3-pin) SOT-23 (Micro3)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55C to +150C (TJ) -55C to +150C (junction)
Gate Drive Level Logic-level (driven from 3.3V / 5V) —
Level MSL 1 MSL1 (per JEDEC J-STD-020)
RoHS Compliance Compliant, Halogen-Free Yes (Pb-free)
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 20 V
Continuous Drain Current (ID) at Ta=25C — 4.1 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM pulsed value]
On-Resistance RDS(on) max @ VGS=4.5V — 46 mOhm
On-Resistance RDS(on) max @ VGS=2.5V — [DATA_NEEDED: RDS(on) at 2.5V]
Gate Threshold Voltage VGS(th) typ — 1.1 V (logic-level)
Gate Charge Qg typ — [DATA_NEEDED: Qg total gate charge]
Power Dissipation (Ta=25C) — 1.3 W
Bebas Halogen — Yes

Spek dan Sumber

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