IRLML2803TRPBF vs IRLML6246TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLML2803TRPBF disebabkan oleh Infineon dan IRLML6246TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRLML2803TRPBF IRLML6246TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies (formerly International Rectifier)
Part Number IRLML2803TRPBF IRLML6246TRPBF
Jenis Transistor N-Channel MOSFET —
Technology IR MOSFET Generation V IR MOSFET (HEXFET Power MOSFET)
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at TA=25C 1.2 A —
On-Resistance RDS(on) at VGS=4.5V 250 mOhm maximum —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th)] —
Gate Charge (Qg) 3.3 nC typical —
Power Dissipation (PD) at TA=25C 540 mW —
Kemasan Micro3 / SOT-23 (3-pin) SOT-23 (Micro3)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55C to +150C (TJ) -55C to +150C (junction)
Gate Drive Level Logic-level (driven from 3.3V / 5V) —
Aras MSL 1 MSL1 (per JEDEC J-STD-020)
RoHS Compliance Compliant, Halogen-Free Yes (Pb-free)
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 20 V
Continuous Drain Current (ID) at Ta=25C — 4.1 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM pulsed value]
On-Resistance RDS(on) max @ VGS=4.5V — 46 mOhm
On-Resistance RDS(on) max @ VGS=2.5V — [DATA_NEEDED: RDS(on) at 2.5V]
Gate Threshold Voltage VGS(th) typ — 1.1 V (logic-level)
Gate Charge Qg typ — [DATA_NEEDED: Qg total gate charge]
Power Dissipation (Ta=25C) — 1.3 W
Boson Bebas — Yes

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