IRLML2803TRPBF vs IRLML6246TRPBF 比較
詳細並排比較 IRLML2803TRPBF 由 Infineon 與 IRLML6246TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRLML2803TRPBF | IRLML6246TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies (formerly International Rectifier) |
| Part Number | IRLML2803TRPBF | IRLML6246TRPBF |
| 電晶體類型 | N-Channel MOSFET | — |
| Technology | IR MOSFET Generation V | IR MOSFET (HEXFET Power MOSFET) |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at TA=25C | 1.2 A | — |
| On-Resistance RDS(on) at VGS=4.5V | 250 mOhm maximum | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th)] | — |
| Gate Charge (Qg) | 3.3 nC typical | — |
| Power Dissipation (PD) at TA=25C | 540 mW | — |
| 封裝 | Micro3 / SOT-23 (3-pin) | SOT-23 (Micro3) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | -55C to +150C (TJ) | -55C to +150C (junction) |
| Gate Drive Level | Logic-level (driven from 3.3V / 5V) | — |
| MSL 等級 | 1 | MSL1 (per JEDEC J-STD-020) |
| RoHS Compliance | Compliant, Halogen-Free | Yes (Pb-free) |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 20 V |
| Continuous Drain Current (ID) at Ta=25C | — | 4.1 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulsed value] |
| On-Resistance RDS(on) max @ VGS=4.5V | — | 46 mOhm |
| On-Resistance RDS(on) max @ VGS=2.5V | — | [DATA_NEEDED: RDS(on) at 2.5V] |
| Gate Threshold Voltage VGS(th) typ | — | 1.1 V (logic-level) |
| Gate Charge Qg typ | — | [DATA_NEEDED: Qg total gate charge] |
| Power Dissipation (Ta=25C) | — | 1.3 W |
| 無鹵素 | — | Yes |