IRLZ34NSTRLPBF vs IRFR5410TRRPBF Perbandingan

Perbandingan bersamaan detil IRLZ34NSTRLPBF dari Infineon dan IRFR5410TRRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRLZ34NSTRLPBF IRFR5410TRRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel MOSFET (Metal Oxide Semiconductor)
Drain-to-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at TC 30 A —
Pulsed Drain Current (IDM) 110 A [DATA_NEEDED: pulsed drain current]
RDS(on) at VGS=5V 35 mOhm (typical) —
Gate Threshold Voltage (VGS(th)) Logic-level (5 V drive compatible) —
Total Gate Charge (Qg) 16.7 nC 70 nC
Power Dissipation (Ta) 3.8 W —
Power Dissipation (Tc) 68 W —
Rentang Suhu Kerja [DATA_NEEDED: operating temperature range] —
Paket D2PAK (TO-263), surface mount TO-252AA (DPAK)
Built-in Body Diode Yes —
Configuration Single with built-in diode —
Tipe Mounting Surface Mount Surface Mount
Switching Frequency Optimization Below 100 kHz —
Cell Structure HEXFET planar (5th generation) —
Qualification JEDEC standard —
Status RoHS Compliant (Pb-free) —
Polarity — P-Channel
Technology — HEXFET (5th Generation)
VDS (Drain-Source Voltage) — -100 V
VGS (Gate-Source Voltage) — ±20 V
VGS(th) (Gate Threshold) — -2 V to -4 V
Continuous Drain Current (ID) at Tc=25C — -13 A
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at 100C]
RDS(on) max at VGS=-10V — 205 mΩ
RDS(on) typical at VGS=-10V — 26 mΩ (per Mouser listing for IRFR5410TRPBF)
Power Dissipation (Pd) at Tc=25C — 66 W
Suhu Hubung Kerja — -55C to +150C
Avalanche Rated — Yes
Lead-Free / RoHS — Yes (PBF suffix indicates lead-free)

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