IRLZ34NSTRLPBF vs IRFR5410TRRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLZ34NSTRLPBF disebabkan oleh Infineon dan IRFR5410TRRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRLZ34NSTRLPBF IRFR5410TRRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel MOSFET (Metal Oxide Semiconductor)
Drain-to-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at TC 30 A —
Pulsed Drain Current (IDM) 110 A [DATA_NEEDED: pulsed drain current]
RDS(on) at VGS=5V 35 mOhm (typical) —
Gate Threshold Voltage (VGS(th)) Logic-level (5 V drive compatible) —
Total Gate Charge (Qg) 16.7 nC 70 nC
Power Dissipation (Ta) 3.8 W —
Power Dissipation (Tc) 68 W —
Gambaran Suhu Operasi [DATA_NEEDED: operating temperature range] —
Kemasan D2PAK (TO-263), surface mount TO-252AA (DPAK)
Built-in Body Diode Yes —
Configuration Single with built-in diode —
Jenis Pemasangan Surface Mount Surface Mount
Switching Frequency Optimization Below 100 kHz —
Cell Structure HEXFET planar (5th generation) —
Qualification JEDEC standard —
Status RoHS Compliant (Pb-free) —
Polarity — P-Channel
Technology — HEXFET (5th Generation)
VDS (Drain-Source Voltage) — -100 V
VGS (Gate-Source Voltage) — ±20 V
VGS(th) (Gate Threshold) — -2 V to -4 V
Continuous Drain Current (ID) at Tc=25C — -13 A
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at 100C]
RDS(on) max at VGS=-10V — 205 mΩ
RDS(on) typical at VGS=-10V — 26 mΩ (per Mouser listing for IRFR5410TRPBF)
Power Dissipation (Pd) at Tc=25C — 66 W
Suhu Hubungan Operasi — -55C to +150C
Avalanche Rated — Yes
Lead-Free / RoHS — Yes (PBF suffix indicates lead-free)

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