IRLZ34NSTRLPBF vs IRLZ34NPBF Perbandingan

Perbandingan bersamaan detil IRLZ34NSTRLPBF dari Infineon dan IRLZ34NPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRLZ34NSTRLPBF IRLZ34NPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-to-Source Voltage (VDS) 55 V 55 V
Continuous Drain Current (ID) at TC 30 A —
Pulsed Drain Current (IDM) 110 A [DATA_NEEDED: pulsed drain current]
RDS(on) at VGS=5V 35 mOhm (typical) —
Gate Threshold Voltage (VGS(th)) Logic-level (5 V drive compatible) —
Total Gate Charge (Qg) 16.7 nC 16.7 nC (typical)
Power Dissipation (Ta) 3.8 W —
Power Dissipation (Tc) 68 W —
Rentang Suhu Kerja [DATA_NEEDED: operating temperature range] —
Paket D2PAK (TO-263), surface mount TO-220AB (through-hole, 3 leads + tab)
Built-in Body Diode Yes —
Configuration Single with built-in diode —
Tipe Mounting Surface Mount Through Hole
Switching Frequency Optimization Below 100 kHz —
Cell Structure HEXFET planar (5th generation) —
Qualification JEDEC standard —
Status RoHS Compliant (Pb-free) Compliant (Pb-free PBF suffix)
Manufacturer — Infineon (formerly International Rectifier)
Part Number Suffix — PBF = Lead-free (Pb-free), Tube packaging
Tipe Transistor — N-Channel HEXFET Power MOSFET
Continuous Drain Current (ID) at Tc=25 C — 30 A
Continuous Drain Current (ID) at Tc=100 C — [DATA_NEEDED: ID at Tc=100 C]
On-Resistance Rds(on) max @ VGS=10 V — 35 mOhm
On-Resistance Rds(on) max @ VGS=5 V — [DATA_NEEDED: Rds(on) at VGS=5 V]
Gate Threshold Voltage VGS(th) — 1.0 V to 2.0 V (logic-level)
Power Dissipation (PD) at Tc=25 C — 68 W
Suhu Hubung Kerja — -55 C to +175 C
Level MSL — Not applicable (through-hole)

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon