IRLZ34NSTRLPBF vs IRLZ34NPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLZ34NSTRLPBF disebabkan oleh Infineon dan IRLZ34NPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRLZ34NSTRLPBF | IRLZ34NPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 55 V | 55 V |
| Continuous Drain Current (ID) at TC | 30 A | — |
| Pulsed Drain Current (IDM) | 110 A | [DATA_NEEDED: pulsed drain current] |
| RDS(on) at VGS=5V | 35 mOhm (typical) | — |
| Gate Threshold Voltage (VGS(th)) | Logic-level (5 V drive compatible) | — |
| Total Gate Charge (Qg) | 16.7 nC | 16.7 nC (typical) |
| Power Dissipation (Ta) | 3.8 W | — |
| Power Dissipation (Tc) | 68 W | — |
| Gambaran Suhu Operasi | [DATA_NEEDED: operating temperature range] | — |
| Kemasan | D2PAK (TO-263), surface mount | TO-220AB (through-hole, 3 leads + tab) |
| Built-in Body Diode | Yes | — |
| Configuration | Single with built-in diode | — |
| Jenis Pemasangan | Surface Mount | Through Hole |
| Switching Frequency Optimization | Below 100 kHz | — |
| Cell Structure | HEXFET planar (5th generation) | — |
| Qualification | JEDEC standard | — |
| Status RoHS | Compliant (Pb-free) | Compliant (Pb-free PBF suffix) |
| Manufacturer | — | Infineon (formerly International Rectifier) |
| Part Number Suffix | — | PBF = Lead-free (Pb-free), Tube packaging |
| Jenis Transistor | — | N-Channel HEXFET Power MOSFET |
| Continuous Drain Current (ID) at Tc=25 C | — | 30 A |
| Continuous Drain Current (ID) at Tc=100 C | — | [DATA_NEEDED: ID at Tc=100 C] |
| On-Resistance Rds(on) max @ VGS=10 V | — | 35 mOhm |
| On-Resistance Rds(on) max @ VGS=5 V | — | [DATA_NEEDED: Rds(on) at VGS=5 V] |
| Gate Threshold Voltage VGS(th) | — | 1.0 V to 2.0 V (logic-level) |
| Power Dissipation (PD) at Tc=25 C | — | 68 W |
| Suhu Hubungan Operasi | — | -55 C to +175 C |
| Aras MSL | — | Not applicable (through-hole) |