ISC037N12NM6ATMA1 vs IPB35N10S3L26ATMA2 Perbandingan
Perbandingan bersamaan detil ISC037N12NM6ATMA1 dari Infineon dan IPB35N10S3L26ATMA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | ISC037N12NM6ATMA1 | IPB35N10S3L26ATMA2 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | OptiMOS 6 (N-channel trench MOSFET) | — |
| Drain-Source Voltage (Vds) | 120 V | 100 V |
| Continuous Drain Current (Id) at Ta=25C | 19.2 A | — |
| Pulsed Drain Current (Idm) at Tc | 163 A | — |
| On-Resistance Rds(on) typ at Vgs=10V | 3.7 mOhm | — |
| Power Dissipation at Ta | 3 W | — |
| Power Dissipation at Tc | 214 W | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) value] | [DATA_NEEDED: Vgs(th) typical value] |
| Gate Charge (Qg) typ | [DATA_NEEDED: Qg total] | — |
| Paket | PG-TDSON-8 FL (SuperSO8) | PG-TO263-3-2 (D2PAK) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55C to +175C (junction) | -55C to +175C |
| Status RoHS | Compliant | Compliant |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| Level MSL | 1 (per JEDEC J-STD-020) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS Power-Transistor |
| Tipe Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (Id) at Tc | — | 35 A |
| Arus Kedip Pengecor | — | 180 A |
| Power Dissipation (Pd) at Tc | — | 71 W |
| RDS(on) (typical) | — | 26.3 mOhm |
| Jumlah Pin | — | 3 |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical value] |
| Automotive Qualified | — | Yes (per Infineon product page classification) |