ISC037N12NM6ATMA1 vs IPB35N10S3L26ATMA2 比較
詳細並排比較 ISC037N12NM6ATMA1 由 Infineon 與 IPB35N10S3L26ATMA2 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | ISC037N12NM6ATMA1 | IPB35N10S3L26ATMA2 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Technology | OptiMOS 6 (N-channel trench MOSFET) | — |
| Drain-Source Voltage (Vds) | 120 V | 100 V |
| Continuous Drain Current (Id) at Ta=25C | 19.2 A | — |
| Pulsed Drain Current (Idm) at Tc | 163 A | — |
| On-Resistance Rds(on) typ at Vgs=10V | 3.7 mOhm | — |
| Power Dissipation at Ta | 3 W | — |
| Power Dissipation at Tc | 214 W | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) value] | [DATA_NEEDED: Vgs(th) typical value] |
| Gate Charge (Qg) typ | [DATA_NEEDED: Qg total] | — |
| 封裝 | PG-TDSON-8 FL (SuperSO8) | PG-TO263-3-2 (D2PAK) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | -55C to +175C (junction) | -55C to +175C |
| RoHS 狀態 | Compliant | Compliant |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| MSL 等級 | 1 (per JEDEC J-STD-020) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS Power-Transistor |
| 電晶體類型 | — | N-Channel MOSFET |
| Continuous Drain Current (Id) at Tc | — | 35 A |
| 脈衝汲極電流 | — | 180 A |
| Power Dissipation (Pd) at Tc | — | 71 W |
| RDS(on) (typical) | — | 26.3 mOhm |
| 腳位數 | — | 3 |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical value] |
| Automotive Qualified | — | Yes (per Infineon product page classification) |