ISC037N12NM6ATMA1 vs IPB35N10S3L26ATMA2 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC037N12NM6ATMA1 disebabkan oleh Infineon dan IPB35N10S3L26ATMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | ISC037N12NM6ATMA1 | IPB35N10S3L26ATMA2 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | OptiMOS 6 (N-channel trench MOSFET) | — |
| Drain-Source Voltage (Vds) | 120 V | 100 V |
| Continuous Drain Current (Id) at Ta=25C | 19.2 A | — |
| Pulsed Drain Current (Idm) at Tc | 163 A | — |
| On-Resistance Rds(on) typ at Vgs=10V | 3.7 mOhm | — |
| Power Dissipation at Ta | 3 W | — |
| Power Dissipation at Tc | 214 W | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) value] | [DATA_NEEDED: Vgs(th) typical value] |
| Gate Charge (Qg) typ | [DATA_NEEDED: Qg total] | — |
| Kemasan | PG-TDSON-8 FL (SuperSO8) | PG-TO263-3-2 (D2PAK) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55C to +175C (junction) | -55C to +175C |
| Status RoHS | Compliant | Compliant |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| Aras MSL | 1 (per JEDEC J-STD-020) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS Power-Transistor |
| Jenis Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (Id) at Tc | — | 35 A |
| Arus Alir Gesa | — | 180 A |
| Power Dissipation (Pd) at Tc | — | 71 W |
| RDS(on) (typical) | — | 26.3 mOhm |
| Bilangan Pin | — | 3 |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical value] |
| Automotive Qualified | — | Yes (per Infineon product page classification) |