ISC060N06NM6ATMA1 vs ISC015N06NM5LF2ATMA1 Perbandingan

Perbandingan bersamaan detil ISC060N06NM6ATMA1 dari Infineon dan ISC015N06NM5LF2ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum ISC060N06NM6ATMA1 ISC015N06NM5LF2ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS 6 —
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID) at Ta 15.2 A 32 A
Continuous Drain Current (ID) at Tc 62 A —
Power Dissipation (PD) at Ta 3 W 3 W
Power Dissipation (PD) at Tc 50 W 217 W
Paket PG-TDSON-8 (TDSON-8) PG-TDSON-8 FL (5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Technology OptiMOS 6 (60V generation) OptiMOS 5 Linear FET 2 (N-Channel)
Configuration Single N-Channel —
Rentang Suhu Kerja -55C to +175C (junction, per OptiMOS 6 family) —
Gate Drive Standard gate drive (10 V VGS recommended for full RDS(on)) —
Status RoHS Compliant —
Level MSL [DATA_NEEDED: MSL level] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] 3 V
On-State Resistance RDS(on) at VGS=10V [DATA_NEEDED: RDS(on) max in mohm] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ/nC] 90 nC
Pulsed Drain Current (IDM) at Tc — 275 A
On-Resistance RDS(on) max at VGS=10V — 1.55 mΩ
On-Resistance RDS(on) at VGS=10V (typ) — 1.3 mΩ
Gate-Source Voltage Rating — ±20 V
Reverse Recovery Charge (Qrr) — 1.3 nC
Input Capacitance (Ciss) — 6.9 nF
Output Capacitance (Coss) — 1.3 nF
Reverse Transfer Capacitance (Crss) — 55 pF
Suhu Hubung Kerja — -55 °C to +175 °C
RoHS — Compliant

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