ISC060N06NM6ATMA1 vs ISC015N06NM5LF2ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISC060N06NM6ATMA1 disebabkan oleh Infineon dan ISC015N06NM5LF2ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr ISC060N06NM6ATMA1 ISC015N06NM5LF2ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS 6 —
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID) at Ta 15.2 A 32 A
Continuous Drain Current (ID) at Tc 62 A —
Power Dissipation (PD) at Ta 3 W 3 W
Power Dissipation (PD) at Tc 50 W 217 W
Kemasan PG-TDSON-8 (TDSON-8) PG-TDSON-8 FL (5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Technology OptiMOS 6 (60V generation) OptiMOS 5 Linear FET 2 (N-Channel)
Configuration Single N-Channel —
Gambaran Suhu Operasi -55C to +175C (junction, per OptiMOS 6 family) —
Gate Drive Standard gate drive (10 V VGS recommended for full RDS(on)) —
Status RoHS Compliant —
Aras MSL [DATA_NEEDED: MSL level] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] 3 V
On-State Resistance RDS(on) at VGS=10V [DATA_NEEDED: RDS(on) max in mohm] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ/nC] 90 nC
Pulsed Drain Current (IDM) at Tc — 275 A
On-Resistance RDS(on) max at VGS=10V — 1.55 mΩ
On-Resistance RDS(on) at VGS=10V (typ) — 1.3 mΩ
Gate-Source Voltage Rating — ±20 V
Reverse Recovery Charge (Qrr) — 1.3 nC
Input Capacitance (Ciss) — 6.9 nF
Output Capacitance (Coss) — 1.3 nF
Reverse Transfer Capacitance (Crss) — 55 pF
Suhu Hubungan Operasi — -55 °C to +175 °C
RoHS — Compliant

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