ISC060N06NM6ATMA1 vs ISC015N06NM5LF2ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng ISC060N06NM6ATMA1 sa pamamagitan ng Infineon at ISC015N06NM5LF2ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
ISC060N06NM6ATMA1 - 60V 62A OptiMOS 6 N-Channel MOSFET | Infineon
ISC060N06NM6ATMA1 ✓ NakahandaInfineon
ISC015N06NM5LF2ATMA1 - 60V 1.5mΩ OptiMOS 5 Linear FET | Infineon
ISC015N06NM5LF2ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | ISC060N06NM6ATMA1 | ISC015N06NM5LF2ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 6 | — |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID) at Ta | 15.2 A | 32 A |
| Continuous Drain Current (ID) at Tc | 62 A | — |
| Power Dissipation (PD) at Ta | 3 W | 3 W |
| Power Dissipation (PD) at Tc | 50 W | 217 W |
| Packhaging | PG-TDSON-8 (TDSON-8) | PG-TDSON-8 FL (5x6 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | OptiMOS 6 (60V generation) | OptiMOS 5 Linear FET 2 (N-Channel) |
| Configuration | Single N-Channel | — |
| Hanay ng Temperature na Operasyon | -55C to +175C (junction, per OptiMOS 6 family) | — |
| Gate Drive | Standard gate drive (10 V VGS recommended for full RDS(on)) | — |
| Tindminan RoHS | Compliant | — |
| Level ng MSL | [DATA_NEEDED: MSL level] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | 3 V |
| On-State Resistance RDS(on) at VGS=10V | [DATA_NEEDED: RDS(on) max in mohm] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ/nC] | 90 nC |
| Pulsed Drain Current (IDM) at Tc | — | 275 A |
| On-Resistance RDS(on) max at VGS=10V | — | 1.55 mΩ |
| On-Resistance RDS(on) at VGS=10V (typ) | — | 1.3 mΩ |
| Gate-Source Voltage Rating | — | ±20 V |
| Reverse Recovery Charge (Qrr) | — | 1.3 nC |
| Input Capacitance (Ciss) | — | 6.9 nF |
| Output Capacitance (Coss) | — | 1.3 nF |
| Reverse Transfer Capacitance (Crss) | — | 55 pF |
| Temperature ng Junction na Operasyon | — | -55 °C to +175 °C |
| RoHS | — | Compliant |