IXDN609YI vs IXDD609SI Perbandingan

Perbandingan bersamaan detil IXDN609YI dari IXYS dan IXDD609SI dari IXYS. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IXDN609YI IXDD609SI
Merek IXYS IXYS
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Configuration Low-Side Low-Side
Peak Output Current (Source/Sink) 9 A —
Supply Voltage Range 4.5 V to 35 V 4.5 V to 35 V
Input Logic Compatibility CMOS, non-inverting —
Logic Input Negative Swing Tolerance -5 V —
Propagation Delay 40 ns (typ) 40 ns (typical)
Waktu naik < 25 ns <25 ns (with 1 nF load)
Waktu Menurun < 25 ns <25 ns (with 1 nF load)
Rentang Suhu Kerja -40 °C to +125 °C -40 C to +125 C (extended)
Paket TO-263-5 (D2PAK), 5 leads + tab 8-SOIC-EP (Power SOIC with exposed pad)
Tipe Mounting Surface Mount Surface Mount
Latchup Immunity Yes (proprietary CMOS input stage) —
Cross-Conduction Protection Yes —
Matched Rise/Fall Times Yes —
Level MSL Level 3 —
Status RoHS Compliant —
Jumlah Output — 1
Peak Source/Sink Current — 9 A
Logic Input Voltage Range — -5 V to VCC
Input Type — CMOS-compatible, non-inverting with enable
Output Stage — Matched propagation delays, cross-conduction protected
Automotive Qualification — AEC-Q100
Latch-up Immunity — Yes (proprietary input structure)

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