K3LK8K80CM-MFCP vs K3LK4K40CM-BGCP Perbandingan

Perbandingan bersamaan detil K3LK8K80CM-MFCP dari Samsung Electronics dan K3LK4K40CM-BGCP dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Samsung Electronics
K3LK8K80CM-MFCP K3LK8K80CM-MFCP - 48Gbit LPDDR5 6400Mbps DRAM | Samsung

K3LK8K80CM-MFCP - 48Gbit LPDDR5 6400Mbps DRAM | Samsung

K3LK8K80CM-MFCP ✓ Aktif
Samsung Electronics
K3LK4K40CM-BGCP K3LK4K40CM-BGCP - LPDDR5 96Gb 6400Mbps DRAM | Samsung

K3LK4K40CM-BGCP - LPDDR5 96Gb 6400Mbps DRAM | Samsung

K3LK4K40CM-BGCP ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum K3LK8K80CM-MFCP K3LK4K40CM-BGCP
Merek Samsung Electronics Samsung Electronics
Kategori Memory ICs DRAM
Status Lingkungan Hidup Aktif Aktif
Tipe Memori LPDDR5 SDRAM LPDDR5 SDRAM
Density 48 Gbit (6 GB) 96 Gb (12 GB)
Organisasi [DATA_NEEDED: organization (x width)] 1536M x 64
Pin Speed 6400 Mbps —
Data Rate (package) 51.2 GB/s (family max) —
Antarmuka LPDDR5 (JESD209-5 class low-power DRAM interface) LPDDR5 (JEDEC)
Paket 315-ball FBGA (MFCP) 496-ball FBGA
Ball Count 315 —
Tipe Mounting Surface Mount Surface Mount
Suhu Kerja -40 C to +105 C (automotive-grade) [DATA_NEEDED: Operating Temperature]
Tegangan Pemuat [DATA_NEEDED: VDD/VDDQ voltage] —
Power Saving vs LPDDR4X Approximately 20% —
Generation LPDDR5 (5th generation low-power DRAM) —
Application Grade Automotive-grade storage chip —
Place of Origin Johor, Malaysia —
Status RoHS unknown [DATA_NEEDED: RoHS Status]
Laju Data — 6400 Mbps per pin
Supply Voltage (VDD) — 1.05 V
Access Time / CAS Latency — [DATA_NEEDED: CAS Latency]
Refresh Scheme — Per-bank / all-bank refresh
Power-Down Modes — Deep sleep / power-down supported
Application Segment — Mobile, embedded, computing modules
Packaging — [DATA_NEEDED: standard packing quantity]

Spek dan Sumber

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