K3LK8K80CM-MFCP vs K3LK4K40CM-BGCP Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci K3LK8K80CM-MFCP disebabkan oleh Samsung Electronics dan K3LK4K40CM-BGCP disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Samsung Electronics
K3LK8K80CM-MFCP K3LK8K80CM-MFCP - 48Gbit LPDDR5 6400Mbps DRAM | Samsung

K3LK8K80CM-MFCP - 48Gbit LPDDR5 6400Mbps DRAM | Samsung

K3LK8K80CM-MFCP ✓ Aktif
Samsung Electronics
K3LK4K40CM-BGCP K3LK4K40CM-BGCP - LPDDR5 96Gb 6400Mbps DRAM | Samsung

K3LK4K40CM-BGCP - LPDDR5 96Gb 6400Mbps DRAM | Samsung

K3LK4K40CM-BGCP ✓ Aktif

Pengandingan Spesifikasi

Parametr K3LK8K80CM-MFCP K3LK4K40CM-BGCP
Merek Samsung Electronics Samsung Electronics
Kategori Memory ICs DRAM
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan LPDDR5 SDRAM LPDDR5 SDRAM
Density 48 Gbit (6 GB) 96 Gb (12 GB)
Organisasi [DATA_NEEDED: organization (x width)] 1536M x 64
Pin Speed 6400 Mbps —
Data Rate (package) 51.2 GB/s (family max) —
Antaramuka LPDDR5 (JESD209-5 class low-power DRAM interface) LPDDR5 (JEDEC)
Kemasan 315-ball FBGA (MFCP) 496-ball FBGA
Ball Count 315 —
Jenis Pemasangan Surface Mount Surface Mount
Suhu Operasi -40 C to +105 C (automotive-grade) [DATA_NEEDED: Operating Temperature]
Tegangan Pemberi Arus [DATA_NEEDED: VDD/VDDQ voltage] —
Power Saving vs LPDDR4X Approximately 20% —
Generation LPDDR5 (5th generation low-power DRAM) —
Application Grade Automotive-grade storage chip —
Place of Origin Johor, Malaysia —
Status RoHS unknown [DATA_NEEDED: RoHS Status]
Kadar Data — 6400 Mbps per pin
Supply Voltage (VDD) — 1.05 V
Access Time / CAS Latency — [DATA_NEEDED: CAS Latency]
Refresh Scheme — Per-bank / all-bank refresh
Power-Down Modes — Deep sleep / power-down supported
Application Segment — Mobile, embedded, computing modules
Packaging — [DATA_NEEDED: standard packing quantity]

Laporan Datasheet & Sumber

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