K4A4G085WD-BCRC vs K4A4G085WG-BCWE Perbandingan
Perbandingan bersamaan detil K4A4G085WD-BCRC dari Samsung Electronics dan K4A4G085WG-BCWE dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | K4A4G085WD-BCRC | K4A4G085WG-BCWE |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Memory Density | 4 Gbit | — |
| Organisasi | 512M x 8 | — |
| Tipe Memori | DDR4 SDRAM (D-die) | DDR4 SDRAM (Volatile) |
| Laju Data | 2400 Mb/s (PC2400) | 3200 Mbps/pin |
| Tegangan Pemuat | 1.2 V | — |
| Paket | FBGA-78 (TFBGA) | FBGA-78 (BCW) |
| Number of Terminals | 78 | — |
| Antarmuka | Parallel | Parallel (DDR4) |
| Access Mode | Multi-bank page burst | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Latensi CAS | [DATA_NEEDED: CAS Latency] | — |
| Rentang Suhu Kerja | [DATA_NEEDED: Operating Temperature Range] | — |
| Refresh | [DATA_NEEDED: Refresh specification] | [DATA_NEEDED: refresh rate specification] |
| Status RoHS | [DATA_NEEDED: RoHS Status] | Compliant |
| Level MSL | [DATA_NEEDED: MSL Level] | — |
| Ukuran Memori | — | 4 Gb |
| Memory Organization | — | 512M x 8 |
| Speed Class | — | DDR4-3200 |
| Supply Voltage (VDD) | — | 1.2 V |
| Technology | — | D-die DDR4 |
| Burst Length | — | BL8 |
| DLL Mode | — | DLL Enabled (per datasheet timing) |
| Suhu Kerja | — | [DATA_NEEDED: operating temperature range] |
| Packaging | — | Tray |