K4A4G085WE-BCRC vs K4A4G085WG-BCWE Perbandingan
Perbandingan bersamaan detil K4A4G085WE-BCRC dari Samsung Electronics dan K4A4G085WG-BCWE dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | K4A4G085WE-BCRC | K4A4G085WG-BCWE |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM (Volatile) |
| Density | 4 Gbit | — |
| Organisasi | 512M x 8 | — |
| Laju Data | 2400 Mbps | 3200 Mbps/pin |
| Clock Cycle Time (tCK) | 0.833 ns | — |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| I/O Voltage (VDDQ) | 1.2 V | — |
| Core Voltage (VPP) | 2.5 V | — |
| Paket | FBGA-78 | FBGA-78 (BCW) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Process Node Family | Samsung E-die | — |
| Antarmuka | Parallel | Parallel (DDR4) |
| Bank Groups | 4n prefetch DDR4 architecture | — |
| Suhu Kerja | [DATA_NEEDED: Operating Temperature Range] | [DATA_NEEDED: operating temperature range] |
| Refresh | 8n / 1X refresh (per JEDEC DDR4) | [DATA_NEEDED: refresh rate specification] |
| Level MSL | [DATA_NEEDED: Moisture Sensitivity Level] | — |
| Status RoHS | Compliant (per LCSC listing) | Compliant |
| Ukuran Memori | — | 4 Gb |
| Memory Organization | — | 512M x 8 |
| Speed Class | — | DDR4-3200 |
| Technology | — | D-die DDR4 |
| Burst Length | — | BL8 |
| DLL Mode | — | DLL Enabled (per datasheet timing) |
| Packaging | — | Tray |