K4A4G085WE-BCRC vs K4A4G085WG-BCWE Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A4G085WE-BCRC sa pamamagitan ng Samsung Electronics at K4A4G085WG-BCWE sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | K4A4G085WE-BCRC | K4A4G085WG-BCWE |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM (Volatile) |
| Density | 4 Gbit | — |
| Organisasyon | 512M x 8 | — |
| Rate ng Data | 2400 Mbps | 3200 Mbps/pin |
| Clock Cycle Time (tCK) | 0.833 ns | — |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| I/O Voltage (VDDQ) | 1.2 V | — |
| Core Voltage (VPP) | 2.5 V | — |
| Packhaging | FBGA-78 | FBGA-78 (BCW) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Process Node Family | Samsung E-die | — |
| Interface | Parallel | Parallel (DDR4) |
| Bank Groups | 4n prefetch DDR4 architecture | — |
| Temperature na Operasyon | [DATA_NEEDED: Operating Temperature Range] | [DATA_NEEDED: operating temperature range] |
| Refresh | 8n / 1X refresh (per JEDEC DDR4) | [DATA_NEEDED: refresh rate specification] |
| Level ng MSL | [DATA_NEEDED: Moisture Sensitivity Level] | — |
| Tindminan RoHS | Compliant (per LCSC listing) | Compliant |
| Laki ng Memory | — | 4 Gb |
| Memory Organization | — | 512M x 8 |
| Speed Class | — | DDR4-3200 |
| Technology | — | D-die DDR4 |
| Burst Length | — | BL8 |
| DLL Mode | — | DLL Enabled (per datasheet timing) |
| Packaging | — | Tray |