K4A8G085WB-BCPB vs H5ANAG8NBJR-PBC Perbandingan
Perbandingan bersamaan detil K4A8G085WB-BCPB dari Samsung Electronics dan H5ANAG8NBJR-PBC dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | K4A8G085WB-BCPB | H5ANAG8NBJR-PBC |
|---|---|---|
| Merek | Samsung Electronics | SK hynix |
| Kategori | Memory ICs | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | $4,10 | — |
| Tipe Memori | DDR4 SDRAM (volatile DRAM) | DDR4 SDRAM |
| Ukuran Memori | 8 Gb | — |
| Memory Organization | 1G x 8 | — |
| Tegangan Pemuat | 1.2 V | — |
| Max Clock Frequency | 1066 MHz | — |
| Max Access Time | 0.18 ns | — |
| Max Standby Current | 0.016 mA | — |
| Refresh Cycles | 8192 | — |
| Technology | CMOS, 8Gb B-die | — |
| Paket | 78-ball FBGA (BGA78 / TFBGA), rectangular, 11 mm length | FBGA-78 (7.5 mm x 11 mm) |
| Number of Terminals | 78 | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | 0C to +85C | [DATA_NEEDED: operating temperature range] |
| Antarmuka | DDR4 SDRAM parallel interface | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant (Lead-Free & Halogen-Free per Hynix family datasheet) |
| Operating Temperature Grade | Commercial (0C to 85C) | — |
| Density | — | 16 Gbit (2 GB) |
| Organisasi | — | x8 |
| Supply Voltage (VDD) | — | 1.2 V |
| Speed Grade / Data Rate | — | PBC suffix, DDR4-2666 class |
| Bank Architecture | — | 16 banks in 4 bank groups (DDR4 standard) |
| Prefetch | — | 8n |
| Tipe Antarmuka | — | Parallel, SSTL12 |
| CAS Latency (typical bin) | — | [DATA_NEEDED: CAS latency] |
| Refresh | — | Self refresh, 1x/2x/4x refresh modes |
| Die Revision | — | BJR |
| Level MSL | — | [DATA_NEEDED: moisture sensitivity level] |
| Standard Package Quantity | — | [DATA_NEEDED: standard quantity] |