K4A8G165WB-BCRC vs H5AN8G6NCJR-VKC Perbandingan
Perbandingan bersamaan detil K4A8G165WB-BCRC dari Samsung Electronics dan H5AN8G6NCJR-VKC dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | K4A8G165WB-BCRC | H5AN8G6NCJR-VKC |
|---|---|---|
| Merek | Samsung Electronics | SK hynix |
| Kategori | Memory ICs | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM (DRAM, volatile) | DDR4 SDRAM |
| Ukuran Memori | 8 Gb | 8 Gbit |
| Memory Organization | 512M x 16 | 512M x 16 |
| Antarmuka | Parallel (DDR4 SDRAM bus) | Parallel |
| Supply Voltage (VDD) | 1.2 V | 1.14 V to 1.26 V |
| Laju Data | 2400 Mbps/pin (DDR4-2400) | 2666 Mbps (MT/s) |
| Technology | CMOS, B-die 8Gb die | — |
| Paket | 96-ball FBGA (PBGA96) | FBGA-96 |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | -40C to +95C | 0C to +95C |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC / CA Parity | CRC function supported | — |
| On-Chip Termination | Dynamic ODT | — |
| ZQ Calibration | Yes | — |
| Clock Frequency | 1200 MHz (DDR4-2400) | 1.333 GHz |
| Standby Current | — | 28 mA |
| Operating Current | — | 45 mA |
| Fitur | — | Auto self-refresh, auto precharge, asynchronous reset, data mask, write leveling, CRC, dynamic ODT, ZQ calibration |
| Lead-Free / Halogen-Free | — | Yes (per datasheet description) |
| Status RoHS | — | Compliant |
| Status Lingkungan Hidup | — | Active |