K4A8G165WB-BCRC vs H5AN8G6NCJR-VKC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G165WB-BCRC disebabkan oleh Samsung Electronics dan H5AN8G6NCJR-VKC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4A8G165WB-BCRC | H5AN8G6NCJR-VKC |
|---|---|---|
| Merek | Samsung Electronics | SK hynix |
| Kategori | Memory ICs | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM (DRAM, volatile) | DDR4 SDRAM |
| Saiz Ingatan | 8 Gb | 8 Gbit |
| Memory Organization | 512M x 16 | 512M x 16 |
| Antaramuka | Parallel (DDR4 SDRAM bus) | Parallel |
| Supply Voltage (VDD) | 1.2 V | 1.14 V to 1.26 V |
| Kadar Data | 2400 Mbps/pin (DDR4-2400) | 2666 Mbps (MT/s) |
| Technology | CMOS, B-die 8Gb die | — |
| Kemasan | 96-ball FBGA (PBGA96) | FBGA-96 |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | -40C to +95C | 0C to +95C |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC / CA Parity | CRC function supported | — |
| On-Chip Termination | Dynamic ODT | — |
| ZQ Calibration | Yes | — |
| Clock Frequency | 1200 MHz (DDR4-2400) | 1.333 GHz |
| Standby Current | — | 28 mA |
| Operating Current | — | 45 mA |
| Ciri-ciri | — | Auto self-refresh, auto precharge, asynchronous reset, data mask, write leveling, CRC, dynamic ODT, ZQ calibration |
| Lead-Free / Halogen-Free | — | Yes (per datasheet description) |
| Status RoHS | — | Compliant |
| Status Lingkungan Hidup | — | Active |