K4AAG165WM-BCTD vs K4AAG165WM-BCRC Perbandingan
Perbandingan bersamaan detil K4AAG165WM-BCTD dari Samsung Electronics dan K4AAG165WM-BCRC dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K4AAG165WM-BCRC - 16Gb DDR4 x16 SDRAM 3200Mbps | Samsung
K4AAG165WM-BCRC ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | K4AAG165WM-BCTD | K4AAG165WM-BCRC |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gb | 16 Gb |
| Organisasi | 1G x 16 | 1G x 16 |
| Speed | 2666 Mbps | — |
| Tegangan Pemuat | 1.2 V (1.14 V to 1.26 V) | — |
| Suhu Kerja | 0C to +85C | [DATA_NEEDED: operating temperature range for K4AAG165WM-BCRC] |
| Paket | 96FBGA (96-ball Fine-Pitch Ball Grid Array) | 96-ball FBGA |
| Antarmuka | SSTL-12 | DDR4 (SSTL-12) |
| Auto Precharge | Yes | Yes |
| Asynchronous Reset | Yes | Yes |
| CRC Function | Yes | Yes |
| ZQ Calibration | Yes | Yes |
| Dynamic On-Chip Termination | Yes | Yes |
| Data Mask | Yes | — |
| Tipe Mounting | Surface Mount (BGA solder reflow) | Surface Mount |
| Status RoHS | RoHS (per LCSC listing) | Compliant |
| Laju Data | — | 3200 Mbps |
| Supply Voltage (VDD) | — | 1.2 V |
| Data Mask Function | — | Yes |
| CAS Latency (CL) | — | [DATA_NEEDED: CAS latency at 3200 Mbps] |